دوشنبه ٢٣ تیر ١٣٩٩






آرش دقیقی

دانشیار

مهندسی برق (الکترونیک، مخابرات)

دانشکده فنی و مهندسی

تلفن: +98 38 3232 4401

E-mail: A @ B ,,, b = eng.sku.ac.ir , A = daghighi-a

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زمینه های تحقیقاتی
   ادوات و مدارات سیلیکون روی عایق مایکروالکترونیک
   کنترل عملی سیستمهای صنعتی



سوابق تحصیلی
   دکتری، مهندسی برق، دانشگاه ایالتی واشنگتن، ایالات متحده امریکا، تاريخ فارغ التحصيلی: ١٣٨٣
   کارشناسی ارشد، مهندسی برق، دانشگاه صنعتی خواجه نصیرالدین طوسی، ایران ، تاريخ فارغ التحصيلی: ١٣٧٦
   کارشناسی ، مهندسی برق، دانشگاه صنعتی اصفهان، ایران ، تاريخ فارغ التحصيلی: ١٣٧٤

مقالات
International Journal
1. M. Teshnehlab and A. Daghighi, Multivariable Process Control using Flexible-Neural-Networks , 6th Iranian Conference on Electrical Engineering, PP. 225-229, 1998.
2. M. Teshnehlab and A. Daghighi, Expert Neural-Network Controller for Real Experimental System , 3rd Asian Control Conference, ASCC, PP 326-329, 2000, China
3. A. Daghighi and M. A. Osman, Optimization of Body Contacts in SOI-MOSFETs , IEEE Workshop on micro-electronics and Electron Devices, Boise, Idaho, October 25, 2002, USA.
4. A Daghighi and M A Osman, A Two-dimensional Model for Investigating Body Contact Structures in PD SOI MOSFETs , Microelectronic Engineering, Elsevier Science, Vol 70/1, pp 83-92, 2003.
5. A. Daghighi and M. A. Osman, Three-Dimensional Simulation of Body Contact-Structures in PD SOI-MOSFETs , 15th IEEE Biennial UGIM Microelectronic Symposium, PP. 288-291, 2003, USA.
6. A. Daghighi and M. A. Osman, Small-Signal Analysis of A SOI-MOSFET Device with novel Area-Efficient Body Contact , IEEE SoutheastCon 2005, PP. 88-91, 2005, USA.
7. A. Daghighi and M. A. Osman, Application of A new Body Contact to SOI LD-MOSFET Devices, 3-D Simulation , 30th IEEE International Semiconductor Conference, Oct 15-17, 2007, Romania.
8. A Daghighi, MA Osman and MA Imam, An Area Efficient Body Contact for Low and High Voltage SOI MOSFET Devices , Solid-State Electronics, Elsevier Science, 52, 196–204, 2008.
9. K Ghowsi, A Daghighi and H Ghowsi, Conductometric studies of simple electrolytes and micellar solutions , Asian Journal of Chemistry, Vol 22, No 6, 2010.
10. S Otroj, A Sagaiean, A Daghighi and Z Nemati, The effect of nano-size additives on the electrical conductivity of matrix suspension and properties of self-flowing low-cement high alumina refractory castables , Ceramics International, Elsevier Science, Vol 36, No 4, 2010.
11. A Daghighi, K Ghowsi and M Nilforoushan, Automated conductometry measurements of simple electrolytes and micellar solutions using a voltage divider technique , Journal of solution chemistry, SpringerLink, Vol 39, No 7, pp 959-966, 2010.
12. S Otroj, MR Nilforoushan, A Daghighi and R Marzban, Impact of Dispersants on the Mechanical Strength Development of Alumina-Spinel Self Flowing Refractory Castables , The Journal Ceramics-Silikáty, Vol 54, No 3, pp 284-289, 2010.
13. S Otroj and A Daghighi, Microstructure and Phase Evolution of Alumina-Spinel Self-Flowing Refractory Castables Containing Nano-Alumina Particles , Ceramics International, Elsevier Science, Vol 37, No 3, pp 1003-1009, April 2011.
14. A Daghighi and MA Osman, Experimental Characterization of PD SOI MOSFET Devices Fabricated with Diamond-Shaped Body Contact , International Journal of Electronics, Vol 98, No 6, pp 801-812, June 2011.
15. A Daghighi, A Novel Structure to Improve DIBL in Fully-Depleted Silicon on Diamond Substrate , Diamond and Related Materials, 40, pp 51-55, 2013.
16. A Daghighi, Output-conductance transition-free method for improving radio frequency linearity of Silicon-on-Insulator MOSFET circuits , IEEE Trans. on Electron Devices, Vol. 61, No. 7, July 2014.
17. Arash Daghighi, Hadi Hematian , Diamond-shaped body contact for on-state breakdown voltage improvement of SOI LDMOSFET , Solid-State Electronics, Volume 129, March 2017, Pages 182-187.



کتب و جزوات
١. A. Daghighi، Diamond-Shaped Body Contact for Silicon-on-Insulator MOSFET, Structure and Design، 1st Edition, LAP LAMBERT Academic Publishing, ISBN, 978-3843389518



افتخارات
١. Double insulating silicon on diamond device A silicon-on-diamond (SOD) transistor includes a silicon-based substrate, a diamond insulating layer over the silicon-based substrate, a silicon-based insulating layer directly over and in contact with the diamond insulating layer, a body over the silicon-based insulating layer, and a gate over the body. The structure of the SOD transistor provides improved drain induced barrier lowering (DIBL) in fully-depleted SOD transistors by using a second, silicon-based insulating layer.
٢. ندا پورداوود Method for improving the radio frequency linearity of silicon-on-insulator MOSFET circuits A method for improving the radio frequency linearity of SOI MOSFET circuits is disclosed. In particular, a method for determining output conductance transition-free body resistances (“Rbody”) for SOI MOSFETs used in SOI MOSFET circuits to eliminate their output conductance transition in the radio frequency range is disclosed. The Rbody of the SOI MOSFETs can be adjusted by changing the number of fingers, i.e., gates, in an SOI MOSFET and/or varying other layout parameters, such as finger width.
٣. دانش آموز منتخب المپیاد فیزیک کشوری - سال 1369 - دریافت لوح تقدیر از پدر علم نوین فیزیک ایران، مرحوم دکتر محمود حسابی



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